december 2001 - revised may 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxt3bj overvoltage protector series tisp4290t3bj, tisp4350t3bj, TISP4400T3BJ bidirectional thyristor overvoltage protectors description modem protection against: -tia/eia-is-968 type a & b surge -ul 60950, clause 6. power cross -csa 22.2 no. 60950, clause 6. power cross low differential capacitance ................................... 23 pf typ. ion-implanted breakdown region -precise and stable voltage -low voltage overshoot under surge these devices are designed to limit overvoltages on the telephone line. overvoltages are normally caused by a.c. power system o r lightning flash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the ring and tip wires for telephones and modems). combi nations of devices can be used for multi-point protection (e.g. 3-point protection between ring, tip and ground). the protector consists of a symmetrical voltage-triggered bidirectional thyristor. overvoltages are initially clipped by breakd own clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. this low-voltage on s tate causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current helps prevent d.c. latchup as the diverted current subsides.these protectors are guaranteed to voltage limit and withstand the listed lightning surges in both po larities. after a tia/eia-is-968 (replaces fcc part 68) type a surge the equipment can be faulty, provided that the fault mode causes the equipment to be unusable. there are two wave shapes used: 10/160 for longitudinal surges and 10/560 for metallic surges. for modems with a tisp4350t3bj connected between the ring and tip wires (and without overvoltage protection to ground), the longitudinal 10/160 a pplied to both ring and tip will not activate the tisp4350t3bj, giving an operational pass. the metallic 10/560 is applied between ring a nd tip wires and will operate the tisp4350t3bj. as the tisp4350t3bj has a current rating of 100 a, 10/560 it will survive the fcc part type a 100 a, 10/560 metallic surge giving an operational pass. how to order device symbol smb package (top view) rated for international surge wave shapes 12 mdxxcm rt t r sd4xaa wave shape standard i ppsm a 2/10 gr-1089-core 250 8/20 iec 61000-4-5 250 10/160 tia/eia-is-968 150 10/700 itu-t k.20/.21/.45 120 9/720 tia/eia-is-968 120 10/560 tia/eia-is-968 100 10/1000 gr-1089-core 80 .............................................. ul recognized component *rohs directive 2002/95/ec jan 27 2003 including annex * r o h s c o m p l ia n t device v drm v v (bo) v ?4290t3 220 290 ?4350t3 275 350 ?4400t3 335 400 device package carrier tisp4xxxt3bj bj (smb/do-214aa j-bend) r (embossed tape reeled) tisp4xxxt3bjr-s order as
december 2001 - revised may 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. description (continued) tisp4xxxt3bj overvoltage protector series overload ratings, t a = 25 c (unless otherwise noted) absolute maximum ratings, t a = 25 c (unless otherwise noted) after a tia/eia-is-968 type b surge the equipment must be operational. as the tisp4350t3bj has a current rating of 120 a, it wi ll survive both type b surges, metallic (25 a, 9/720) and longitudinal (37.5 a, 9/720), giving an operational pass to fcc part 68 type b surges . the tia/eia-is-968 b type ringer has voltages of 56.5 v d.c. and up to 150 v rms a.c., giving a peak voltage of 269 v. the tisp 4350t3bj will not clip the b type ringing voltage as it has a high impedance up to 275 v. rating symbol value unit peak overload on-state current, a.c. power line cross tests ul 60950 (see note 4) i t(ov)m see figure 4 for current versus time a rms note 4: these electrical stress levels may damage the device silicon chip. after test, the pass criterion is either that the devi ce is functional or, if it is faulty, that it has a short circuit fault mode. in the short circuit fault mode, the following equipmen t is protected as the device is a permanent short across the line. the equipment would be unprotected if an open circuit fault mode developed. rating symbol v alue unit repetitive peak off-state voltage (see note 1) ?4290t3 ?4350t3 v drm 220 275 ?4400t3 335 v non-repetitive peak on-state pulse cur rent (see notes 1 and 2) i ppsm a 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 250 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 volt age wave shape) 250 10/160 (tia/eia-is-968 (replaces fcc part 68), 10/160 voltage wave shape) 150 5/310 (itu-t k.44, 10/700 voltage wave shape used in k.20/45/21) 120 5/320 (tia/eia-is-968 (replaces fcc part 68), 9/720 voltage wave shape) 120 10/560 (tia/eia-is-968 (replaces fcc part 68), 10/560 voltage wave shape) 100 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 80 non-repetitive peak on-state current (see notes 1, 2 and 3) i tsm 25 30 2.1 a 20 ms (50 hz), full sine wave 16.7 ms (60 hz), full sine wave 1000 s 50 hz/60 hz initial rate of ri se of on-s tate current, linear curr ent ramp, maximum ramp value < 50 a di t /dt 500 a/ s junction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. initially, the device must be in thermal equilibrium with t j =25 c. 2. these non-repetitive rated currents are peak values of either polarity. the surge may be repeated after the device returns to its initial conditions. 3. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. derate current values at -0.61 %/ c for ambient temperatures above 25 c.
december 2001 - revised may 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxt3bj overvoltage protector series recommended operating conditions electrical characteristics, t a = 25 c (unless otherwise noted) component min typ max unit r s series resistor for tia/eia-is-968 (replaces fcc part 68), 10/160 type a surge survival (t-g or r-g connection) series resistor for tia/eia-is-968 (replaces fcc part 68), 10/560 type a surge survival series resistor for tia/eia-is-968 (replaces fcc part 68), 9/720 type b surge survival series resistor for gr-1089-core first-level surge survival series resistor for k.20, k.21 and k.45 1.5 kv, 10/700 surge survival series resistor for k.20, k.21 and k.45 coordination with a 400 v primary protector 2.5 0 0 5 0 6 ? i drm repetitive peak off- state current i h holding current i t = 5a, di/dt=+/-30ma/ms 150 a dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 0.85 v drm 5 kv/ s i d off-state current v d = 50 v v d drm =v t a = 85 c 10 t a = 25 c 5 a t a = 85 c 10 a c off off-state capacitance f=1mhz, v =1v rms, v d d =0, f=1mhz, v =1v rms, v d d = -1 v f=1mhz, v =1v rms, v d d = -2 v f=1mhz, v =1v rms, v d d = -50 v f=1mhz, v =1v rms, v d d = -100 v ?4290t3 ?4350t3 290 350 ?4400t3 400 54 48 43 65 58 52 pf 20 16 24 19 parameter test conditions min typ max unit i (bo) ac breakover current dv/dt = 250 v/ms, r source =300 ? 800 a v v (bo) ac breakover voltage dv/dt = 250 v/ms, r source =300 ? v t on-state voltage i tw = 5 a, t = 100 s 3v thermal characteristics parameter t est conditions min typ max unit r ja junction to free air thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) , t a = 25 c t a = 25 c , (see note 5) 115 c/w 265 mm x 210 mm populated line card, 4-layer pcb, 52 note 5: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths.
december 2001 - revised may 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxt3bj overvoltage protector series parameter measurement information figure 1. voltage-current characteristic for t and r terminals all measurements are referenced to the r terminal -v v drm i drm v d i h i tsm i ppsm v (bo) i d quadrant i i switching characteristic quadrant iii switching characteristic +v +i v (bo) v d i d i h i tsm i ppsm -i pm4xag v drm i drm i (bo) i (bo) i t v t i t v t
december 2001 - revised may 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxt3bj overvoltage protector series typical characteristics figure 2. figure 3. normalized capacitance vs off-state voltage v d - off-state voltage - v off-state voltage - v 0.5 1 2 3 5 10 20 30 50 100150 capacitance normalized to v d = 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 tc4taa t j = 25 c v d = 1 vrms typical capacitance asymmetry vs off-state voltage v d ? 23457 20304050 110 |c off(+vd) - c off(-vd) | capacitance asymmetry ?pf 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 v d = 1 v rms, 1 mhz v d = 10 mv rms, 1 mh z tc4tab
december 2001 - revised may 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxt3bj overvoltage protector series rating and thermal information figure 4. peak overload on-state current against duration peak overload on-state current vs current duration t - current duration - s 0?1 0? 1 10 100 1000 i t(ov)m peak overload on-state current ?a rms 2 2.5 3 3.5 4 5 6 7 8 9 15 20 25 30 35 40 10 ti4mam 40 a 100 a 2 s 2.2 a 7 a wiring simulator device will carry current of tests 1 thru 5 clause 6.4, ul 60950, for full test time ?tisp? is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?bourns? is a registered trademark of bourns, inc. in the u.s. and other countries.
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